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|TowerJazz Announces RF SOI 65nm Ramp in its 300mm Fab with Best-in-Class Metrics|
Secures tens of thousands of wafers per year under long-term partnership with
With best in class metrics, TowerJazz's 65nm RF SOI process enables the combination of low insertion loss and high power handling RF switches with options for high-performance low-noise amplifiers as well as digital integration. The process can reduce losses in an RF switch improving battery life and boosting data rates in handsets and IoT terminals.
TowerJazz is also proud to announce its relationship with Maxscend, a provider of RF components and IoT integrated circuits, ramping in this new technology.
"We chose TowerJazz for its advanced technology capabilities and its ability to deliver in high volume while continuously innovating with a strong roadmap. We specifically selected its 300mm 65nm RF SOI platform for our next-generation product line due to its superior performance, enabling low insertion loss and high power handling," said
"We are delighted to see the strong adoption of 300mm RF SOI through this large capacity and supply agreement with TowerJazz to augment our already significant 200mm RF SOI partnership. TowerJazz was the first foundry to ramp our RFeSI products to high volume production in 200mm and continues as one of the industry leaders in innovation in this exciting RF market with advanced and differentiated offerings," said Paul Boudre,
"We are thrilled about our continued partnership with Maxscend as they bring breakthrough products to market, manufactured using our latest 300mm 65nm RF SOI platform. Also, we are very pleased with our
For more information on TowerJazz's 65nm RF SOI technology, please visit: http://www.towerjazz.com/sige-bicmos_rf-cmos.html.
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