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FORM 6-K

SECURITIES AND EXCHANGE COMMISSION

Washington, D.C. 20549

For the month March 2020 No. 2

TOWER SEMICONDUCTOR LTD.

(Translation of registrant's name into English)

Ramat Gavriel Industrial Park

P.O. Box 619, Migdal Haemek, Israel 2310502

  (Address of principal executive offices)

Indicate by check mark whether the registrant files or will file annual reports under cover Form 20-F or Form 40-F.

Form 20-F ☒           Form 40-F ☐

 

Indicate by check mark whether the registrant by furnishing the information contained in this Form is also thereby furnishing the information to the Commission pursuant to Rule 12g3-2(b) under the Securities Exchange Act of 1934.

 

Yes ☐           No ☒

 

On March 4, 2020, the Registrant Announced Tower Semiconductor SiGe

Technology Adopted by Renesas Electronics for Production of its Market

Leading SATCOM RFICs

 

SIGNATURES

Pursuant to the requirements of the Securities Exchange Act of 1934, the registrant has duly caused this report to be signed on its behalf by the undersigned, thereunto duly authorized.

 

 

 

 

NEWS ANNOUNCEMENT

FOR IMMEDIATE RELEASE

Tower Semiconductor SiGe Technology Adopted by Renesas Electronics for Production of its Market Leading

SATCOM RFICs

 

The compact and highly efficient Ku- and Ka-Band active beamforming and Low Noise Amplifier RFICs will enable next-generation

terminals that utilize phased array antennas for LEO, MEO and GEO satellite communications

 

 

Phased array antennas or more specifically active electronically scanned arrays (AESAs) have been a staple of the defense industry for over 40 years, but are now rapidly emerging in the commercial marketplace due to the exponentially growing demands for connectivity. These antennas will be critical to the enablement of high data-rate, low latency connectivity in the air, at sea and on the ground, taking advantage of the rapid growth in throughput from existing GEO and emerging non-geostationary (NGSO) LEO/MEO satellite networks.

 

“In migrating to AESAs from mechanical antennas, our customers require reliable, compact and cost-effective ICs with exceptionally low power consumption and noise figure that meet their system EIRP and G/T requirements,” said Naveen Yanduru, Vice President of RF Communications, Industrial and Communications Business Division at Renesas. “Thanks to the strong collaboration between Tower Semiconductor and our world-class design team, we are exceeding our customer’s expectations by all metrics and progressing rapidly into production.”

 

 

“We are pleased to be working with a leader such as Renesas that is leveraging the value of our SiGe Terabit platform to deliver breakthrough phased array product performance for Satcom applications,” said Marco Racanelli, Tower Semiconductor Sr. Vice President and General Manager of Analog IC Business Unit. “This complements the booming opportunities we see for similar phased array products in 5G mmWave and automotive radar where SiGe offers dramatically lower power consumption than alternatives while preserving the ability for high levels of integration and low cost.”

 

By some estimates, the Satcom market is projected to grow to $50 billion by 2027 at a CAGR of 10%. In the same timeframe, the number of satellites is projected to triple from approximately 8,000 to 24,000, primarily driven by growth in NGSO communications satellites providing ubiquitous high-data rate and low latency communications. This is expected to fuel a transition from fixed and mechanically steered antennas to electronically steered antennas, creating a significant market for beamforming ICs.

 

About Tower Semiconductor

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