Tower Semiconductor Expands its Leading-Edge Power Management Platforms Supporting Higher Power and Higher Voltage ICs
Releasing its second-generation 65nm BCD scalable power LDMOS expanding voltages to 24V operation and 20% lower Rdson; and adding deep trench isolation (DTI) to its 180nm BCD platform enabling up to 40% die size reduction for operation up to 125V
Tower will present its latest power management technologies at the 2022 PCIM conference in Nürnberg,
Tower’s 65nm BCD platform is known as the best-in-class sub-90nm BCD technology with its leading figure of merit in power performance, cost, and integration competitiveness. The second-generation 65nm BCD benefits from power performance and/or die size reduction by up to 20% due to the decrease in LDMOS Rdson for devices up to 16V together with voltage extension to 24V operation. These advancements firmly address the needs of the computing and consumer markets for monolithic high-power converters, including, high-power voltage regulator for CPU and GPUs in addition to applications such as chargers high-power motor drivers, and power converters.
The Company’s 180nm BCD is the industry’s widest, best-in-class platform with respect to voltage coverage, isolation schemes, power performance, die size, and mask count. The 180nm BCD deep trench isolation scheme (DTI) offers improved noise immunity within a single IC, flexibility at the elevated voltages enabling to select between multiple isolation scheme, and reduced die size by up to 40%. All these strategic features support the market’s increasing deployment of 48V systems that require ICs to hold voltages up to 120V and more; and specifically address the advancing requirements of the industrial and automotive applications including gate drivers, power converters, motor drivers, and automotive 48V systems with their demand for advanced isolations in ICs with multiple voltage domains at a smaller die size.
The Company will participate in upcoming 2022 PCIM in Nürnberg,
For additional details on the Company’s power management technology offerings, please visit here.
Safe Harbor Regarding Forward-Looking Statements
This press release includes forward-looking statements, which are subject to risks and uncertainties. Actual results may vary from those projected or implied by such forward-looking statements. A complete discussion of risks and uncertainties that may affect the accuracy of forward-looking statements included in this press release or which may otherwise affect Tower’s business is included under the heading “Risk Factors” in Tower’s most recent filings on Forms 20-F, F-3, F-4, and 6-K, as were filed with the
Source: Tower Semiconductor